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INTEGRATED CIRCUITS
DATA SHEET
UAA2067G Image reject 1800 MHz transceiver for DECT applications
Product specification Supersedes data of 1995 Sep 18 File under Integrated Circuits, IC17 1996 Oct 22
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
FEATURES * Receiver with: - low noise amplifier - dual quadrature mixers for image rejection (lower sideband) - I and Q combining networks at a fixed IF * Both high-frequency and low-frequency VCOs including buffers with good isolation for low pulling * Transmitter with: - dual quadrature mixers for image rejection (lower sideband) - amplitude ramping circuit - amplifier with high output power. APPLICATIONS * 1800 MHz transceiver for DECT hand-portable equipment * TDMA systems. GENERAL DESCRIPTION The UAA2067G is a low-power transceiver intended for use in portable and base station transceivers complying with the DECT system. The IC performs in accordance with specifications in the -30 to +85C temperature range. The UAA2067G contains a front-end receiver for the 1800 to 1900 MHz frequency range, a high-frequency VCO for the 1650 to 1850 MHz range, a low-frequency VCO for the 100 to 140 MHz frequency range and a transmitter with a high-output power amplifier driver stage for the 1800 to 1900 MHz frequency range. Designed in an advanced BiCMOS process, it combines high performance with low-power consumption and a high degree of integration, thus reducing external component costs and total radio size. Its first advantage is to provide typically 34 dB of image rejection in the receiver path. Thus, the image filter between the LNA and the mixer is redundant and consequently can be removed. The receive section ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2067G LQFP32 DESCRIPTION
UAA2067G
consists of a low-noise amplifier that drives a quadrature mixer pair. Image rejection is achieved by this RF mixer pair and the two phase shifters in the I and Q channels that phase shift the IF by 45 and 135 respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. Signals presented at the RF input at LO - IF frequency are rejected through this signal processing while signals at LO + IF frequency can form the IF signal. Its second advantage is to provide a good buffered high-frequency VCO signal to the RX and TX mixers and to the synthesizer-prescaler. Switching the receive or transmit section on gives a very small change in VCO frequency. Its third advantage is to provide a good buffered low-frequency VCO signal to the TX mixers, to the synthesizer-prescaler and the second down conversion mixer in a double conversion receiver. Switching the transmit section on gives a very small change in VCO frequency. The frequency of each VCO is determined by a resonator network that is external to the IC. Each VCO has a regulated power supply voltage that has been designed specifically for minimizing a change in frequency due to changes in the power supply voltage, which may be caused for instance by switching on the power amplifier. Its fourth advantage is to provide typically 33 dBc of image rejection in the single-sideband up-conversion mixer. Thus the image filter between the power amplifier and the antenna is redundant and may consequently be removed. Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two phase shifters in the low-frequency VCO signal that shifts the phase to 0 and 90. The output signals of the mixers are summed to form the single-upper-sideband output signal. The output stage is a high-level output buffer with an output power of approximately 4 dBm. The output level is sufficient to drive a three-stage bipolar preamplifier for DECT.
VERSION SOT401-1
plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
1996 Oct 22
2
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
QUICK REFERENCE DATA For conditions see Chapters "DC characteristics" and "AC characteristics". SYMBOL VCC ICC(RX) ICC(TX) ICC(RFLO) ICC(IFLO) NFRX GCP IRRX fRFLO fIFLO Pout IRTX Tamb supply voltage receive supply current transmit supply current RF oscillator supply current IF oscillator supply current receive noise figure conversion power gain receive image frequency rejection RFLO frequency range IFLO frequency range output transmit power transmit image frequency rejection operating ambient temperature PARAMETER - - - - - - - 1.65 100 - - -30 MIN. 3.0 3.6 24 42 15 7 - 30 34 - - 4 33 +25 TYP. - - - - 7.0 - - 1.85 140 - - +85
UAA2067G
MAX. 5.5 V
UNIT mA mA mA mA dB dB dB GHz MHz dBm dBc C
1996 Oct 22
3
Product specification
UAA2067G
Fig.1 Block diagram.
handbook, full pagewidth
1996 Oct 22
V CC(MIX) PDRX 31 45o 30 26 27 GND6 IFDEC
BLOCK DIAGRAM
GND7
Philips Semiconductors
32
RXA
28
RXB 135o
29
LNA
IFO
25
VCC1(RFLO)
18
VCC2(RFLO)
23
GND5 1 0o 90o 6 IFLO OSCILLATOR 7 2 4 3
22
UAA2067
5
VCC(IFLO) PDIFLO IFLORES GND2 IFLOREG IFLOO GND1
PDRFLO
15
Image reject 1800 MHz transceiver for DECT applications
RFLOA
20
RFLOB
RFLO 21 OSCILLATOR
4
RAMP
RFLOREG
24
RFLOO
17
VCC(RFLOO)
16
GND4
19
TXA
13
TXB
12
0o 90o
8
ICEN
9 14 TXRAMP VCC(TX) GND3
10
11
MGC867
PDTX
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
PINNING SYMBOL PDIFLO IFLOREG GND1 IFLOO VCC(IFLO) IFLORES GND2 ICEN PDTX TXRAMP VCC(TX) TXB TXA GND3 PDRFLO VCC(RFLOO) RFLOO VCC1(RFLO) GND4 RFLOA RFLOB GND5 VCC2(RFLO) RFLOREG IFO IFDEC VCC(MIX) RXA RXB GND6 PDRX GND7 Notes 1. Pins 3 and 7 are internally short-circuited. 2. Pins 11 and 27 should be at the same DC voltage. 3. Pins 18 and 23 are internally short-circuited. 4. Pins 19 and 22 are internally short-circuited. PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 power-down for IFLO regulator decoupling for IFLO ground for IFLO; note 1 IFLO output supply voltage for IFLO IFLO resonator ground for IFLO resonator; note 1 IC enable power-down for transmitter power ramping transmitter supply voltage for transmitter output stage; note 2 transmitter RF output B transmitter RF output A ground for transmitter output stage power-down for RFLO supply voltage for RFLO output RFLO output supply voltage for RFLO oscillator; note 3 ground for RFLO oscillator; note 4 RFLO resonator RFLO resonator ground for RFLO oscillator; note 4 supply voltage for RFLO oscillator; note 3 regulator decoupling for RFLO receiver IF output IF decoupling supply voltage for receive and transmit mixers; note 2 receiver RF input A receiver RF input B ground for receive and transmit mixers power-down for receiver die-pad ground DESCRIPTION
UAA2067G
1996 Oct 22
5
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
UAA2067G
27 V CC(MIX)
26 IFDEC
32 GND7
31 PDRX
30 GND6
29 RXB
28 RXA
handbook, full pagewidth
PDIFLO IFLOREG GND1 IFLOO VCC(IFLO) IFLORES GND2 ICEN
1 2 3 4
25 IFO
24 RFLOREG 23 V CC2(RFLO)
22 GND5 21 RFLOB
UAA2067
5 6 7 8 20 RFLOA 19 GND4 18 V CC1(RFLO) 17 RFLOO
TXRAMP 10
VCC(TX) 11
TXB 12
TXA 13
GND3 14
PDRFLO 15
VCC(RFLOO) 16
PDTX 9
MGC865
Fig.2 Pin configuration.
1996 Oct 22
6
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
FUNCTIONAL DESCRIPTION Receive section The circuit contains a balanced low-noise amplifier followed by two high dynamic range mixers. The local oscillator signals, shifted in phase to 0 and 90 mix the amplified RF signal to the I and Q channels.These two channels are buffered, phase shifted by 45 and 135 respectively, amplified and recombined internally to realize the image rejection. Signals at the RF input at RFLO - IF frequencies are rejected through the signal processing while signals at the RFLO + IF frequencies form the IF signals. An image rejection of typically 34 dB is obtained for an IF between 100 and 120 MHz. Balanced signals are used for minimizing crosstalk due to package parasitics. The IF output is single-ended. The typical load is 50 . Fast switching, on/off of the receive section is controlled by the hardware input PDRX. RFLO section The high-frequency oscillator (RFLO oscillator) supplies the local oscillator signal for the down-conversion (receive) and up-conversion (transmit) mixers. This VCO uses an on-chip regulator for a power-supply voltage-independent output frequency. The buffered VCO signal is fed into a phase shifter and an off-chip prescaler-synthesizer. The output signal of the phase-shifter is used for driving the RX and TX mixers. Due to the good isolation in the buffer stages, a very small change in VCO frequency is obtained when switching the RX and TX mixers on. Fast switching, on/off of the oscillator section is controlled by the hardware input PDRFLO. IFLO section The low-frequency oscillator (IFLO oscillator) internally supplies the local oscillator signal to the single-sideband transmit mixer. The buffered VCO signal is fed into a phase shifter. The output signal of the phase-shifter is used for driving the TX mixers. Due to the good isolation in the buffer stages, a very small change in VCO frequency is obtained when switching the TX mixer on. Fast switching on/off of the oscillator section is controlled by the hardware input PDIFLO input. Transmit section
UAA2067G
The circuit contains two balanced mixers, each of which is driven by the RFLO and IFLO signals. The output signal of the two mixers is summed and buffered to obtain the single upper-sideband signal at frequency RFLO + IFLO. With the use of an off-chip time constant, the ramping circuit defines the power ramp-up and ramp-down of the pre-amplifier output signal. Balanced signals are used for minimizing crosstalk due to package parasitics. Fast switching, on/off, of the transmit section is controlled by the hardware input PDTX. The power supply voltage of the transmit mixers, the adding circuit and ramping circuit is taken from the VCC(MIX) and GND6 for maximum isolation from the preamplifier output stage. OPERATING MODES To use the IC, all VCC pins must be connected to the supply voltage. For transceiving a DECT signal, the RFLO and IFLO sections should be powered-on. After a stable frequency has been reached (mainly determined by the synthesizer design), the receiver or transmitter can be powered-on. GMSK data modulation can be supplied in two different ways: the data is directly modulated on IFLO or RFLO. The ramping of the power level can be set with a time constant that is external to the IC. Table 1 gives the definition of the polarity of the switching signals on the receive, the RFLO, the IFLO and the transmit sections.
1996 Oct 22
7
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
Table 1 Switching signals on the receiver SECTION receive section powered-on receive section powered-off PDRFLO PDIFLO PDTX ICEN RFLO section powered-on RFLO section powered-off IFLO section powered-on IFLO section powered-off transmit section powered-on transmit section powered-off all sections disabled all sections enabled Note 1. Active when ICEN is enabled. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC GND Pl(max) Tj(max) Pdis(max) Tstg Note 1. Pins short-circuited internally must be short-circuited externally. THERMAL CHARACTERISTICS SYMBOL Rth j-a HANDLING Every pin withstands the ESD test in accordance with "MIL-STD-883C class 2 (method 3015.5)". PARAMETER thermal resistance from junction to ambient in free air VALUE 90 supply voltage difference in ground supply voltage applied between all grounds maximum power input maximum operating junction temperature maximum power dissipation in stagnant air at 25C storage temperature note 1 PARAMETER CONDITIONS - - - - - -65 MIN. 6 LEVEL LOW HIGH LOW HIGH LOW HIGH LOW HIGH LOW HIGH
UAA2067G
SIGNAL PDRX
on/off on(1) off on(1) off on(1) off on(1) off off on
MAX. V V + 0.3 +20 +150 500 +150
UNIT
dBm C mW C
UNIT K/W
1996 Oct 22
8
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
DC CHARACTERISTICS VCC = 3.6 V; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP.
UAA2067G
MAX.
UNIT
Pins: VCC(MIX), VCC(TX), VCC(IFLO), VCC1(RFLO), VCC2(RFLO) and VCC(RFLOO) VCC ICC(RX) ICC(RFLO) ICC(IFLO) ICC(TX) ICC(PD) VIH VIL IIH IIL VRXA,B VIFO VIFDEC IRFLOA,B VRFLOREG VRFLOO VIFLORES VIFLOREG VIFLOO ITXA,B ITXRAMP supply voltage supply current supply current RFLO supply current IFLO supply current supply current over full temperature range receive section on; DC tested RFLO section on; DC tested IFLO section on; DC tested transmit section on; DC tested power-down mode; DC tested 3.0 18 11 5 34 - 3.6 24 15 7 42 2 - - - - 5.5 30 20 9 54 50 V mA mA mA mA A
Pins: PDRX, PDTX, PDRFLO, PDIFLO and ICEN HIGH level input voltage LOW level input voltage HIGH level static input current LOW level static input current pin at VCC - 0.4 V pin at 0.4 V 2.1 -0.3 -1 -1 VCC + 0.3 0.8 +1 +1 V V A A
Pins: RXA, RXB, IFO and IFDEC DC input voltage level DC output voltage level DC level receive section on receive section on receive section on 2.1 0.9 2.45 2.4 1.1 2.65 2.7 1.3 2.85 V V V
Pins: RFLOA, RFLOB, RFLOREG and RFLOO DC current DC level DC output voltage level RFLO section on RFLO section on RFLO section on 1 2.45 2.8 2 2.65 3.1 3 2.85 3.4 mA V V
Pins: IFLORES, IFLOREG and IFLOO DC level DC level DC output voltage level IFLO section on IFLO section on IFLO section on 1.85 2.35 2.2 2.1 2.55 2.45 2.3 2.8 2.7 V V V
Pins: TXA, TXB and TXRAMP DC output current DC input current transmit section on VTXRAMP = 3 V; transmit section on 2 - 10 - 18 200 mA A
1996 Oct 22
9
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
AC CHARACTERISTICS VCC = 3.0 to 5.5 V; Tamb = -30 to +85C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - 190
UAA2067G
TYP.
MAX.
UNIT
Receive mode (receive and RFLO sections powered-on) fRFI RiRF RF input frequency RF input resistance (real part of the parallel input impedance) RF input capacitance (imaginary part of the parallel input impedance) RFLO level at input to RX balun RF interference for 3 dB desensitization conversion power gain balanced; at 1890 MHz 1800 - 1900 - MHz
CiRF
balanced; at 1890 MHz
-
0.8
-
pF
PRFLORX DES3RX GCP
note 1 interference frequency offset 6 MHz; note 1 RF input to IF output (typical load) over full temperature range Tamb = 25 C
- -
-70 -35
-40 -
dBm dBm
24 27 -36 -6 - -6 -30 - 100 - 20 23 35
30 30 -33 - 2 +2 -25 5.8 110 50 34 34 -
36 33 - +6 30 - - 7 120 - - - -
dB dB dBm dB s dBm dBm dB MHz dB dB dB
CP1RX Po(RX) trec IP2-2RX IP3RX NFRX fIF ZL(IF) IRRX PSRR
1 dB input compression point IF power for CP1RX < Pin < +8 dBm recovery time for Pin = +12 dBm mixer 2-2 spurious intercept point 3rd order intercept point overall noise figure IF frequency range typical application IF output load impedance image frequency rejection power supply rejection ratio
referenced to RF input; note 1 referenced to IF power at CP1RX; note 1 note 1 referenced to the RF input; note 1 referenced to the RF input; note 1 RF input to IF output; note 1 fIF = 110 MHz over full temperature range Tamb = 25 C note 1; typical load; at 110 MHz
1996 Oct 22
10
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
SYMBOL PARAMETER CONDITIONS MIN. - -250
UAA2067G
TYP.
MAX.
UNIT
RF local oscillator (RFLO section powered-on) fRFLO(min) Ri(RFLO) minimum oscillator frequency range oscillator input resistance (real part of the parallel input impedance) oscillator input capacitance (imaginary part of the parallel input impedance) local oscillator output level at pin 17; RMS value local oscillator output impedance at pin 17 typical load resistance harmonic levels at RFLO output (pin 17) note 1 balanced; at 1.77 GHz 1650 - 1850 - MHz
Ci(RFLO)
balanced; at 1.77 GHz
-
2.7
-
pF
Vo(RFLO) Zo(RFLO) RL(RFLO) HAR(RFLO)
note 2; typical load resistance at 1.77 GHz
50 - - -
75
-
mV dBc
30 - 60j - 300 - - -20
IF local oscillator (IFLO section powered-on) fIFLO(min) Ri(IFLO) minimum oscillator frequency range oscillator input resistance (real part of the parallel input impedance) oscillator input capacitance (imaginary part of the parallel input impedance) IF local oscillator output level at pin 4; RMS value local oscillator output impedance (real part) typical load resistance typical load capacitance harmonic levels at IFLO output note 1 100 - 120 -480 140 - MHz
Ci(IFLO)
-
2.1
-
pF
Vo(IFLO) Zo(IFLO) RL(IFLO) CL(IFLO) HAR(IFLO)
100 - - - -
160 - 5 7 -
- 100 - - -15
mV k pF dBc
1996 Oct 22
11
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
SYMBOL PARAMETER CONDITIONS MIN. - 110 0.6
UAA2067G
TYP.
MAX.
UNIT
Transmit mode (transmit, RFLO and IFLO sections powered-on) fTX Ro(TX) Co(TX) RF output frequency RF output resistance (real part of the parallel output impedance) RF output capacitance (imaginary part of the parallel output impedance) RFLO feedthrough at the TX output output transmit power balanced; note 1 balanced; note 1 1800 - - 1900 - - MHz pF
FTRFLOTX Pout
referenced to the desired frequency; Tamb = 25 C; note 1 VTXRAMP = 0 V; note 1 over full temperature range Tamb = 25 C
-
-25
-23
dBc
-2 1
4 4
8 7
dBm dBm
IRTX
image frequency rejection
referenced to the desired frequency; note 1 over full temperature range Tamb = 25 C 20 23 10 - - - Tamb = 25 C; notes 1 and 3 over full temperature range over full temperature range +130 - - 33 33 - - 0 3.0 +133 - - - - - 10 dBc dBc k pF V V dBc/Hz s pF
ZinTXRAMP CinTXRAMP VTXRAMP(min) CNRTX Timing tup Ci Notes
input impedance at pin TXRAMP input capacitance at pin TXRAMP ramp voltage for Pout = Pmax - 30 dB carrier-to-noise ratio at TX output
VTXRAMP(max) ramp voltage for Pout = Pmax
start-up/power-down time of each block input capacitance of logic inputs
5 -
10 5
1. Measured and guaranteed only on the Philips demonstration board, including PCB and balun. 2. The imaginary part of the load impedance has been tuned out. A power match is assumed. 3. A simplified DECT type approval measurement is used; the spectrum analyser has the following settings: RBW = 100 kHz, VBW = 100 Hz, use delta marker and add 50 dB (correction for RBW = 100 kHz), fRFLO = 1.77 GHz and fIFLO = 120 MHz, f = 4.686 MHz.
1996 Oct 22
12
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
INTERNAL PIN CONFIGURATION SYMBOL PDIFLO ICEN PDTX PDRFLO PDRX IFLOREG PIN 1 8 9 15 31 2 DC VOLTAGE (V) - - - - - 2.55
1, 8, 9, 15, 31
UAA2067G
EQUIVALENT CIRCUIT
VCC
GND
MBH672
VCC
RFLOREG
24
2.65
2, 24, 26
IFDEC GND
26 3, 7, 14, 19, 22, 30, 32
2.65 0
MBH673
GND
VCC(IFLO)
IFLOO
4
2.45
4
GND
MBH674
VCC
5, 11, 16, 18, 23, 27
3.6
VIFLOREG
6
IFLORES
6
2.1
GND
MBH675
1996 Oct 22
13
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
DC VOLTAGE (V)
UAA2067G
SYMBOL
PIN
EQUIVALENT CIRCUIT
VCC(TX) VCC(MIX)
TXRAMP
10
-
10
GND
MBH676
VCC(TX)
TXB
12
VCC
12 13
TXA
13
VCC
GND
MBH677
VCC(RFLOO)
17
RFLOO
17
3.1
GND
MBH678
VRFLOREG
RFLOA
20
2.0
20 21
RFLOB
21
2.0
GND
MBH679
1996 Oct 22
14
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
DC VOLTAGE (V)
UAA2067G
SYMBOL
PIN
EQUIVALENT CIRCUIT
VCC(IFLO)
IFO
25
1.1
25
GND
MBH680
VCC(MIX)
RXA
28
2.4
28
29
RXB
29
2.4
GND
MBH681
1996 Oct 22
15
mod BB515 PDTX C11 10 pF C9 4.7 pF IFLO output ICEN C10 10 pF PDIFLO C1 10 pF PDRX 0.82 pF 8.2 pF 6.8 nH 6.8 nH 8.2 pF 6.8 nH C31 1 nF IF output C32 4.7 nF C34 1 nF VCC 0.82 pF RF input C39 10 pF C2 1 nF C7 1 nF L1 82 nH C5 22 nF C8 150 pF C4 1 nF R3 4.7 k R2 10 k C6 10 pF BB515
Product specification
UAA2067G
Fig.3 Demonstration board diagram.
handbook, full pagewidth
1996 Oct 22
tune VCC C13 10 pF
Philips Semiconductors
TXRAMP
R4 4.7 k
APPLICATION INFORMATION
8.2 nF
VCC
C14 1 nF
1 pF
1/4 PDRFLO C19 10 pF
Image reject 1800 MHz transceiver for DECT applications
1/4
TX output
5.6 nH 12 nH 1 pF
8.2 pF
87654321 32 9 31 10 30 11 29 12 UAA2067 28 13 27 14 26 15 25 16 17 18 19 20 21 22 23 24
16
C20 1 nF C23 8.2 pF 1/4 1/4 C22 10 pF R6 33 RFLO output C24 4.7 nF R5 33 VCC 8.2 pF L6 (0603) 1.5 nH C25 22 pF BBY 5103W L7 (0603) 1.5 nH C26 22 pF R7 1 k R8 BBY 5103W 1 k C27 10 pF
5.6 nH
8.2 pF VCC
C21 10 pF
C28 22 nF
C33 10 pF VCC C29 10 pF C30 1 nF
RFLO tune
MGC866
Figure 3 illustrates the electrical diagram of the UAA2067G Philips demonstration board for DECT applications. All matching is to 50 for measurement purposes. Different values will be used in a real application.
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
Application-indicative values Measured on the Philips demonstration board, including PCB and balun at Tamb = 25 C. SYMBOL PARAMETER CONDITIONS f = 864 kHz f = 2500 kHz f = 4686 kHz PULLRFLO SHIFTRFLO CNRIFLO SPURIFLO pulling due to enabling RX or TX frequency shift due to 200 mV VCC change carrier-to-noise ratio spurious signal modulation due to 0.5 mV (RMS value) on the power supply pulling due to enabling TX frequency shift due to 200 mV VCC change spurious signal modulation due to 0.5 mV (RMS value) on VCC(MIX), VCC(TX) and VCC(RFLO) only spurious signals f = 4686 kHz; note 1 RFLO - 3IFLO RFLO + 2IFLO RFLO + 5IFLO NTX Note 1. Including PSRR of the RFLO circuitry. white noise level at the output f = 4686 kHz f = 4686 kHz; measured at TX output VTXRAMP = 3 V MIN. - - - - - - - TYP.
UAA2067G
MAX. - - - - - - -
UNIT
RF local oscillator (RFLO section powered-on) CNRRFLO carrier-to-noise ratio 117 128 134 5 5 dBc/Hz dBc/Hz dBc/Hz kHz kHz
IF local oscillator (IFLO section powered-on) 140 -60 dBc/Hz dBc
PULLIFLO SHIFTIFLO PSRRTX
- - -
1 2.5 -74
- - -
kHz kHz
Transmit mode (transmit, RFLO and IFLO sections powered-on) dBc
SPURTX
- - - -
-40 -35 -51 135
- - - -
dBc dBc dBc dBc/Hz
1996 Oct 22
17
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
PACKAGE OUTLINE LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
UAA2067G
SOT401-1
c y X
24 25
17 16 ZE
A
e E HE wM bp 32 1 8 9 L detail X Lp A A2 A1 pin 1 index (A 3)
e bp D HD
ZD wM B
vM A
vM B
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.60 A1 0.15 0.05 A2 1.5 1.3 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 5.1 4.9 E (1) 5.1 4.9 e 0.5 HD 7.15 6.85 HE 7.15 6.85 L 1.0 Lp 0.75 0.45 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT401-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-12-19 97-08-04
1996 Oct 22
18
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UAA2067G
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP32 (SOT401-1), LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1996 Oct 22
19
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UAA2067G
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 22
20
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
NOTES
UAA2067G
1996 Oct 22
21
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
NOTES
UAA2067G
1996 Oct 22
22
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver for DECT applications
NOTES
UAA2067G
1996 Oct 22
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 247 9145, Fax. +7 095 247 9144 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
647021/1200/02/pp24
Date of release: 1996 Oct 22
Document order number:
9397 750 01437

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